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MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover?triggered crowbar
protectors. Turn?off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
BIDIRECTIONAL TSPD (
50 AMPERE SURGE
265 thru 365 VOLTS
)
Features
? High Surge Current Capability: 50 A 10 x 1000 m sec, for Controlled
Temperature Environments
?
The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
MT1
MT2
?
?
?
?
?
?
?
IEC 950, UL 1459 & 1950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non?Semiconductor
Devices
Fail?Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered ? File #E210057
Pb?Free Packages are Available
SMB
(No Polarity)
(Essentially JEDEC DO?214AA)
CASE 403C
MARKING DIAGRAMS
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Off?State Voltage ? Maximum V DM
MMT05B230T3
MMT05B260T3
MMT05B310T3
Value
" 170
" 200
" 270
Unit
V
AYWW
RPBx G
G
Maximum Pulse Surge Short Circuit Current
Non?Repetitive Double Exponential Decay
Waveform (Notes 1 and 2)
(?25 ° C Initial Temperature)
8 x 20 m sec
10 x 160 m sec
10 x 560 m sec
10 x 1000 m sec
Maximum Non?Repetitive Rate of Change of
On?State Current Double Exponential Waveform,
R = 1.0, L = 1.5 m H, C = 1.67 m F, I pk = 110A
I PPS1
I PPS2
I PPS3
I PPS4
di/dt
" 150
" 100
" 70
" 50
" 150
A(pk)
A/ m s
RPBx = Device Code
x = G or J
Y = Year
WW = Work Week
G = Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
and best overall value.
? Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 9
1
Publication Order Number:
MMT05B230T3/D
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相关PDF资料
MMT08B260T3G TSPD BIDIRECT 260V 80A SMB
MMT08B310T3 THYRIST TSPD BIDIR 80A 310V SMB
MMT08B350T3G TSPD BIDIRECT 350V 80A SMB
MMT10B310T3G THYRIST TSPD BIDIR 100A 270V SMB
MMT10B350T3G THYRIST TSPD BIDIR 100A 350V SMB
MNT-102-BK-T CONN SHUNT 4POS
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相关代理商/技术参数
MMT05B350T3 功能描述:硅对称二端开关元件 50A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT05B350T3G 功能描述:硅对称二端开关元件 50A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B064T3 功能描述:硅对称二端开关元件 80A Surge 64V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B064T3G 功能描述:硅对称二端开关元件 80A Surge 64V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B260T3 功能描述:硅对称二端开关元件 80A Surge 260V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B260T3G 功能描述:硅对称二端开关元件 80A Surge 260V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B310T3 功能描述:硅对称二端开关元件 80A Surge 310V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B310T3_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD